1. Metal oxide varistor action — a homojunction breakdown mechanism;Einzinger;Appl. Surf. Sci.,1979
2. Tuller, M. H. and Boak, K.-K., Electrical activity at individual grain boundaries and interfaces in semiconducting oxides. In Ceramic Transactions, Grain Boundaries and Interfacial Phenomena in Electronic Ceramics, vol. 41, ed. L. M. Levinson. American Ceramic Society, Westerville, OH, 1994, pp. 19–34.
3. Electrical properties of grain boundaries in polycrystalline compound semiconductors;Greuter;Semicond. Sci. Technol.,1990
4. Senos, A. M. R., Santos, M. R., Moreira, A. P. and Vieira, J. M., Grain boundary phenomena in the early stages of sintering of MO oxides. In Surfaces and Interfaces of Ceramic Materials, ed. L. C. Dufour, C. Monty and G. Petot-Ervas, NATO ASI Series. Kluwer Academic, London, 1989, pp. 553–556.
5. Senos, A. M. R., Vieira, J. M., Pore size distribution and particle rearrangement during sintering. In Proceedings of the International Conference Third Euro-Ceramics vol 1, ed. P. Duran and J. F. Fernandez. Faenza Editrice Iberica S. L., Faenza, 1993, pp. 821–826.