Ferromagnetism and microstructure in Cr implanted p-type (100) silicon-Reference-Cited by-同舟云学术

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Ferromagnetism and microstructure in Cr implanted p-type (100) silicon

Published:2008-10 Issue:3-4 Volume:148 Page:122-125
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Gao L.J.,Chow L.,Vanfleet R.,Jin K.,Zhang Z.H.,Duan X.F.,Xu B.,Zhu B.Y.,Cao L.X.,Qiu X.G.,Zhao B.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference22 articles.

1. Transition metals in silicon

2. Metal Impurities in Silicon-device Fabrication;Graff,2001

3. Diffusion profiles of high dosage Cr and V ions implanted into silicon

4. Above room temperature ferromagnetism in Mn-ion implanted Si

5. Annealing temperature effects on the structure of ferromagnetic Mn-implanted Si

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interdiffusion processes at irradiated Cr/Si interfaces;Journal of Alloys and Compounds;2015-03

2. Structural and magnetic properties of Si semiconductor co-implanted by Fe- and N-ions;Materials Chemistry and Physics;2012-02

3. On Fabrication of High Concentration Mn Doped Si by Ion Implantation: Problem and Challenge;Physics Procedia;2012

4. Effect of annealing temperature on magnetic property of Si1−xCrx thin films;Thin Solid Films;2011-11

5. Enhancement of saturation magnetization in Cr-ion implanted silicon by high temperature annealing;Applied Surface Science;2011-08

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