Buffer layer dependence of magnetic anisotropy in Fe films grown GaAs substrate-Reference-Cited by-同舟云学术

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Buffer layer dependence of magnetic anisotropy in Fe films grown GaAs substrate

Published:2014-12 Issue: Volume:200 Page:1-4
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Jeong Yujin,Lee Hakjoon,Lee Sangyeop,Yoo Taehee,Lee Sanghoon,Liu X.,Furdyna J.K.

Funder

Converging Research Center Program through the Ministry of Science

Basic Science Research Program through the National Research Foundation of Korea

Ministry of Science, ICT & Future Planning

Korea University Grant

National Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference26 articles.

1. Spintronics: A Spin-Based Electronics Vision for the Future

2. A quantum leap

3. Programmable computing with a single magnetoresistive element

4. Magnetization vector manipulation by electric fields

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of VN buffer layer on the magnetic anisotropy of epitaxial Ni₈₀Fe₂₀thin films deposited on MgO (001) substrates;2022 International Semiconductor Conference (CAS);2022-10-12

2. Advances and key technologies in magnetoresistive sensors with high thermal stabilities and low field detectivities;APL Materials;2022-05-01

3. Magnetic properties of Ni films deposited on MBE grown Bi2Se3 layers;AIP Advances;2017-05

4. Magnetic anisotropy of crystalline Fe films grown on (001) GaAs substrates using Ge buffer layers;AIP Advances;2016-05

5. Magnetically correlated anisotropic resistive switching manipulated by electric field in Co/PMN-PT heterostructures;Journal of Alloys and Compounds;2015-10

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