Electric field modulation of electronic structures in InSe and black phosphorus heterostructure-Reference-Cited by-同舟云学术

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Electric field modulation of electronic structures in InSe and black phosphorus heterostructure

Published:2018-01 Issue: Volume:269 Page:112-117
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Ding Yi-min,Shi Jun-jie,Zhang Min,Xia Congxin,Wu Meng,Wang Hui,Cen Yu-lang,Pan Shu-hang

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference53 articles.

1. Approaching ballistic transport in suspended graphene

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus

4. Black phosphorus field-effect transistors

5. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

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1. Electric field and strain tuned the electronic and optical properties of Zr2CO2/MoSe2 van der Waals heterojunction;Physica E: Low-dimensional Systems and Nanostructures;2024-08

2. Electric Field and Strain Tuned the Electronic and Optical Properties of Zr2co2/Mose2 Van Der Waals Heterojunction;2023

3. A Type-II WSe2/BP heterostructure with adjustable electronic properties under external electric field and biaxial strain;Journal of Luminescence;2022-11

4. Electronic and Optical Properties of BP, InSe Monolayer and BP/InSe Heterojunction with Promising Photoelectronic Performance;Materials;2022-09-07

5. A sensitive photodetector: Tuning the electronic structure of the Cu2O/MoS2 heterojunction by controlling the interlayer spacing or electric field;Journal of Materials Research;2022-05-03

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