Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference22 articles.
1. Electronically controlled metastable defect reaction in InP
2. Localization behavior of donor-related complexes in InP under hydrostatic pressure
3. Determination of thePInantisite structure in InP by optically detected electron-nuclear double resonance
4. Vacancies and impurities in InP studied using positron lifetime and an improved Doppler-broadening spectrometer
5. Evidence for complexes of hydrogen with deep-level defects in bulk III-V materials
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Defects in undoped semi-insulating InP;SPIE Proceedings;2014-02-21
2. Investigation of vacancy defect in InP crystal by positron lifetime measurement;Journal of Physics and Chemistry of Solids;2008-02
3. Investigation of Vacancy Defect in InP Crystal by Positron Lifetime;Journal of Rare Earths;2007-06
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