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Influence of temperature and carrier density on the photoluminescence intensity of semiconductor carbon nanotubes

  • Published:2019-02 Issue: Volume:288 Page:5-9
  • ISSN:0038-1098
  • Container-title:Solid State Communications
  • language:en
  • Short-container-title:Solid State Communications

Author:

Van Tan Le,Vy Nguyen Duy,Cao Huy Thien

Funder

Vietnam National Foundation for Science and Technology Development

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference37 articles.

1. Tunable band gaps and excitons in doped semiconducting carbon nanotubes made possible by acoustic plasmons;Spataru;Phys. Rev. Lett.,2010

2. Quantum Theory of the Optical and Electronic Properties of Semiconductors;Haug,1994

3. Semiconductor Optics;Klingshirn,1995

4. Many-body exchange-correlation effects in the lowest subband of semiconductor quantum wires;Hu;Phys. Rev. B,1993

5. Band-gap renormalization in quasi-one-dimensional electron-hole systems;Tanatar;J. Phys. Condens. Matter,1996

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