Band gap variation in bi, tri and few-layered 2D graphene/hBN heterostructures-Reference-Cited by-同舟云学术

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Band gap variation in bi, tri and few-layered 2D graphene/hBN heterostructures

Published:2022-01 Issue: Volume:341 Page:114553
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Torres-Rojas Raúl M.^ORCID,Contreras-Solorio David A.,Hernández Luis,Enciso Agustín^ORCID

Funder

Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional

Consejo Zacatecano de Ciencia, Tecnología e Innovación

Consejo Nacional de Ciencia y Tecnología

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference54 articles.

1. Ab initio strain engineering of graphene: opening bandgaps up to 1 eV;Kerszberg;RSC Adv.,2015

2. Structural defects in graphene;Banhart;ACS Nano,2011

3. Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor;Jangyup;Nature Commun.,2016

4. Bottom-up synthesis of multifunctional nanoporous graphene;Moreno;Science,2018

5. Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect;Castro;Phys. Rev. Lett.,2007

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1. Impact of varying lateral interface ratio on the excitonic and spectral features of planar Graphene Quantum Dot/h-BN van der Waals heterostructures for optoelectronic applications: A Density Functional theory study;Materials Today Communications;2024-06

2. Ferroelectric polarization of graphene/h-BN bilayer of different stacking orders;Surfaces and Interfaces;2024-03

3. Band gap and THz optical adsorption of SnSe and SnSe2 nanosheets on graphene: Negative dielectric constant of SnSe;Results in Physics;2024-02

4. Realization of controllable multifunctionality by interfacial engineering: the case of silicene/hBN van der Waals heterostructure;Modelling and Simulation in Materials Science and Engineering;2024-01-29

5. A facile and scalable fabrication method of scrolled graphene/boron nitride-based van der Waals superlattice heterostructure materials for highly stable supercapacitor electrode application;Nanoscale;2024

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