Strong compensation hinders the p-type doping of ZnO: a glance over surface defect levels
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference43 articles.
1. A comprehensive review of ZnO materials and devices
2. A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds
3. Intrinsicn-type versusp-type doping asymmetry and the defect physics of ZnO
4. Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO
5. Surface and Quantum Confinement Effects in ZnO Nanocrystals
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