Time relaxation of dielectric constant in the commensurate phase of TlGaSe2-Reference-Cited by-同舟云学术

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Time relaxation of dielectric constant in the commensurate phase of TlGaSe2

Published:2004-03 Issue:12 Volume:129 Page:761-764
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Mikailov F.A.,Başaran E.,Şentürk E.,Tümbek L.,Mammadov T.G.,Aliev V.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference14 articles.

1. High-pressure Raman study of the ternary chalcogenides TlGaS2, TlGaSe2, TlInS2, and TlInSe2

2. The structure of the paraelectric and incommensurate phases of TlGaSe2

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase transitions and magnetoelectricity in Fe implanted TlInS₂ and TlGaSe₂ ferroelectric crystals;Ferroelectrics;2023-08-31

2. Magnetoelectricity in Ion-Implanted Ferroelectric Crystals;Advances in Optoelectronic Materials;2021

3. Magnetic resonance and magnetization studies of Fe implanted TlInS2 and TlGaSe2 crystals;Materials Research Express;2019-04-10

4. High Pressure Raman Study of Layered Semiconductor Tlgase2;Materials Science-Poland;2018-06-01

5. Magnetodielectric effects in Co-implanted TlInS2and TlGaSe2crystals;Phase Transitions;2015-10-13

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