New shallow donor centres in high-purity Czochralski-grown silicon single crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference21 articles.
1. Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductors
2. Electrical activity of chalcogen-hydrogen defects in silicon
3. Temperature and sample dependence of the binding free energies of complexes in crystals: The case of acceptor-oxygen complexes in Si
4. Wave-function mixture and composition for hybridized Zeeman states of P in Si
5. Photoelectric Spectroscopy – A New Method of Analysis of Impurities in Semiconductors
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2. Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure;Chinese Physics B;2011-02
3. Strong enhancement of terahertz response in GaAs/AlGaAs quantum well photodetector by magnetic field;Applied Physics Letters;2010-07-12
4. Compensating impurity in high purity silicon single crystal investigated by photo-thermal ionization spectroscopy;Acta Physica Sinica;2008
5. Photo-thermal ionization spectroscopy of shallow acceptors in high purity germanium;Acta Physica Sinica;2008
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