Vacancy induced zero energy modes in graphene stacks: The case of ABC trilayer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference33 articles.
1. Gate-induced insulating state in bilayer graphene devices
2. Trilayer graphene is a semimetal with a gate-tunable band overlap
3. Electrical transport in suspended and double gated trilayer graphene
4. Stacking order dependent electric field tuning of the band gap in graphene multilayers
5. Stacking-dependent band gap and quantum transport in trilayer graphene
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1. Gate-Tunable Magnetism and Giant Magnetoresistance in Suspended Rhombohedral-Stacked Few-Layer Graphene;Nano Letters;2022-06-17
2. Application of Spin-Orbit Coupling in Exotic Graphene Structures and Biology;Solid State Physics [Working Title];2020-02-13
3. Large tunable intrinsic gap in rhombohedral-stacked tetralayer graphene at half filling;2D Materials;2018-08-02
4. Electronic and structural properties of vacancies and hydrogen adsorbates on trilayer graphene;Journal of Physics: Condensed Matter;2015-08-04
5. Competition between spontaneous symmetry breaking and single-particle gaps in trilayer graphene;Nature Communications;2014-12
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