Ab initio calculation of high pressure phases and electronic properties of CuInSe2-Reference-Cited by-同舟云学术

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Ab initio calculation of high pressure phases and electronic properties of CuInSe2

Published:2012-05 Issue:9 Volume:152 Page:775-778
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Pluengphon Prayoonsak,Bovornratanaraks Thiti,Vannarat Sornthep,Yoodee Kajornyod,Ruffolo David,Pinsook Udomsilp

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference25 articles.

1. CuInSe2 for photovoltaic applications

2. Photoacoustic spectroscopy of defect states in CuInSe2 single crystals

3. Temperature-resolved photoluminescence studies of CuInSe2

4. A model for the band gap shrinkage in the chalcopyrite semiconductor CuInSe2

5. Optical properties of amorphous CuInSe2

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pressure-Induced Irreversible Metallization Accompanying Phase Transition of Chalcopyrite Cu(In_0.7Ga_0.3)Se₂;Inorganic Chemistry;2024-07-22

2. Electronic structure, elastic, optical and thermal properties of chalcopyrite CuBY2 (B = In, Ga, In0.5 Ga0.5; Y = S, Se, Te) solar cell compounds;Materials Today Communications;2021-03

3. First-principles determination of pressure-induced structure, anisotropic elasticity and ideal strengths of CuInS2 and CuInSe2;Solid State Communications;2020-08

4. Characterization of lattice parameters gradient of Cu(In1-Ga )Se2 absorbing layer in thin-film solar cell by glancing incidence X-ray diffraction technique;Journal of Materials Science & Technology;2020-08

5. Segregation of point defects at the CuInSe2(001)/GaAs(001) interface;Solid State Communications;2019-09

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