First-principles calculations of properties for chalcogen (S, Se, Te) doped silicon-Reference-Cited by-同舟云学术

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First-principles calculations of properties for chalcogen (S, Se, Te) doped silicon

Published:2016-01 Issue: Volume:226 Page:1-4
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Du Lingyan,Wu Zhiming,Li Shibin,Hu Zheng,Jiang Yadong

Funder

National Natural Science Foundation of China

Sichuan Province International Scientific and Technological Cooperation and Exchange of Research Plan

National Higher-Education Institution General Research and Development Funding

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference21 articles.

1. Sulfur point defects in crystalline and amorphous silicon

2. Chalcogen doping of silicon via intense femtosecond-laser irradiation

3. Insulator-to-Metal Transition in Sulfur-Doped Silicon

4. Intermediate bands versus levels in non-radiative recombination

5. Efficiency improvements of silicon solar cells by the impurity photovoltaic effect

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recrystallization of Si Nanoparticles in Presence of Chalcogens: Improved Electrical and Optical Properties;Materials;2022-12-11

2. First-principles calculations to investigate electronic structures and optical properties of chalcogens-hyperdoped silicon;Solid State Communications;2022-02

3. Phase evolution of Te-hyperdoped Si upon furnace annealing;Applied Surface Science;2021-11

4. Diffusion mechanisms of Mo contamination in Si;Physical Review Materials;2020-02-10

5. Possible excited states in Si:Se and Si:Te prepared by femtosecond-laser irradiation of Si coated with Se or Te film;Infrared Physics & Technology;2020-01

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