Dislocation-related electroluminescence of silicon after electron irradiation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. Room-temperature silicon light-emitting diodes based on dislocation luminescence
2. A pure 1.5 μm electroluminescence from metal-oxide-silicon tunneling diode using dislocation network
3. Defect-related light emission in the 1.4–1.7 μm range from Si layers at room temperature
4. Electroluminescence of dislocation-rich Si layers grown using oxidized Si surfaces
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1. Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence;Materials Today: Proceedings;2018
2. Electroluminescence properties of LEDs based on electron-irradiated p-Si;Semiconductors;2016-02
3. Room-Temperature Near-Infrared Electroluminescence from Boron-Diffused Silicon Pn-Junction Diodes;Frontiers in Materials;2015-02-23
4. Research progress of silicon light source;Acta Physica Sinica;2015
5. Structural and luminescent properties of electron-irradiated silicon;AIP Conference Proceedings;2014
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