Optical properties of undoped, Be-doped, and Si-doped wurtzite-rich GaAs nanowires grown on Si substrates by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference22 articles.
1. Position-controlled epitaxial III–V nanowires on silicon
2. GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy
3. InAs nanowires on Si substrates grown by solid source molecular beam epitaxy
4. Epitaxial III−V Nanowires on Silicon
5. Growth of GaAs Nanowires on Si Substrates Using a Molecular Beam Epitaxy
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