On possible spin injection at non-ideal Schottky contacts
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference21 articles.
1. Recent advances in Schottky barrier concepts
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3. T.C.G. Reusch, M. Wenderoth, L. Winking, N. Quaas, R.G. Ulbrich, lanl-preprint:cond-mat/0302551.
4. Fermi Level Pinning in Ag/Si Schottky Structures Prepared by Ionized Cluster Beam Technique
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1. Temperature dependent spin injection properties of the Ni nanodots embedded metallic TiN matrix and p-Si heterojunction;Thin Solid Films;2013-11
2. Multiphonon Resonant Raman Scattering and Photoinduced Charge-Transfer Effects at ZnO–Molecule Interfaces;The Journal of Physical Chemistry C;2012-12-17
3. A novel spin-polarized transport effect based on double-Schottky barriers;Physica E: Low-dimensional Systems and Nanostructures;2006-01
4. Schottky barrier and spin polarization at theFe3O4−Nb:SrTiO3interface;Physical Review B;2005-05-25
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