Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions-Reference-Cited by-同舟云学术

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Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions

Published:2010-10 Issue:37-38 Volume:150 Page:1856-1859
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Kuo K.M.,Lin C.Y.,Lin C.T.,Chern G.,Chao C.T.,Horng Lance,Wu J.C.,Wu Teho,Huang C.Y.,Ohyama H.,Isogami S.,Tsunoda M.,Takahashi M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference11 articles.

1. Magnetic Tunnel Junctions for Spintronic Memories and Beyond

2. Magnetocapacitance effect of spin tunneling junctions

3. Enhancement and inverse behaviors of magnetoimpedance in a magnetotunneling junction by driving frequency

4. Oscillating Voltage Dependence of High-Frequency Impedance in Magnetic Tunneling Junctions

5. Frequency-dependent magnetoresistance and magnetocapacitance properties of magnetic tunnel junctions with MgO tunnel barrier

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Voltage-induced Magnetocapacitance Effect in Magnetic Tunnel Junctions;Materia Japan;2020-04-01

2. Robustness of Voltage-induced Magnetocapacitance;Scientific Reports;2018-10-02

3. Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4;Scientific Reports;2017-06-01

4. Large magnetocapacitance effect in magnetic tunnel junctions based on Debye-Fröhlich model;Applied Physics Letters;2015-09-28

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