Vibrational signature of the Si–N defect in Si-doped GaNxAs1−x
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference21 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Development of InGaAsN-based 1.3 m VCSELs
3. III N V semiconductors for solar photovoltaic applications
4. Mutual passivation of electrically active and isovalent impurities
5. Mutual passivation effects in Si-doped dilutedInyGa1−yAs1−xNxalloys
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1. Optical properties of conductive and semi-insulating HVPE-GaN crystals;CrystEngComm;2024
2. First-principles predictions of the physical properties of GaNxAs1–x: Materials for futuristic optoelectronic devices;Pramana;2023-09-02
3. Intrinsic point defects and the n - and p -type dopability of the narrow gap semiconductors GaSb and InSb;Physical Review B;2019-07-25
4. Demonstration of the donor characteristics of Si and O defects in GaN using hybrid QM/MM;physica status solidi (a);2016-11-30
5. N incorporation and associated localized vibrational modes in GaSb;Physical Review B;2014-01-22
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