Scaling of the breakdown in the impurity band of doped GaAs/AlGaAs quantum well demonstrating virtual Anderson transition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference9 articles.
1. Virtual Anderson transition in a narrow impurity band of doped p-GaAs/AlGaAs layers
2. Suppression of the virtual anderson transition in the impurity band of doped quantum well structures
3. Electronic Properties of Doped Semiconductors;Shklovskii,1984
4. Energy spectrum structure and quantum states of disordered condensed systems
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1. Anomalous Hall Effect in GaAs–AlGaAs Quantum Wells Doped by Nonmagnetic Impurities near the Metal–Insulator Transition;Journal of Experimental and Theoretical Physics;2022-07
2. Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs;physica status solidi (RRL) – Rapid Research Letters;2020-04
3. Simultaneous Effects of Impurity and Electric Field on Entropy Behavior in Double Cone-Like Quantum Dot;Communications in Theoretical Physics;2018-01
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