Bandgap engineering of strained monolayer semiconductor δ-Cu2S and its outstanding mechanical flexibility-Reference-Cited by-同舟云学术

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Bandgap engineering of strained monolayer semiconductor δ-Cu2S and its outstanding mechanical flexibility

Published:2019-11 Issue: Volume:302 Page:113704
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Zhu Haiyan,Li Shuaiqi,Xia Wangsuo,Wang Ying,Shi Liwei

Funder

Fundamental Research Funds for the Central Universities

Qing Lan Project

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference43 articles.

1. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets;Chhowalla;Nat. Chem.,2013

2. Femtosecond spectroscopic investigation of the carrier lifetimes in digenite quantum dots and discrimination of the electron and hole dynamics via ultrafast interfacial electron transfer;Lou;J. Phys. Chem. B,2003

3. Van der Waals heterostructures

4. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

5. In-situ growth of copper sulfide nanocrystals on multiwalled carbon nanotubes and their application as novel solar cell and amperometric glucose sensor materials;Lee;Nano Lett.,2007

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic band structure change with structural transition of buckled Au₂X monolayers induced by strain;Physical Chemistry Chemical Physics;2024

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