The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structure-Reference-Cited by-同舟云学术

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The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structure

Published:2011-06 Issue:11 Volume:151 Page:830-833
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Miczek Marcin,Bidziński Piotr,Adamowicz Bogusława,Mizue Chihoko,Hashizume Tamotsu

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference37 articles.

1. Demonstration of Flame Detection in Room Light Background by Solar-Blind AlGaN PIN Photodiode

2. Optical sensors based on III-nitride photodetectors for flame sensing and combustion monitoring

3. Advanced Photonics, Inc. webpage: www.advancedphotonix.com.

4. Kyosemi Corp. webpage: www.kyosemi.co.jp.

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