Effective mass and bandstructure of n-InAs from magnetophonon resonance and Raman scattering at temperatures between T=64 and 360 K-Reference-Cited by-同舟云学术

Effective mass and bandstructure of n-InAs from magnetophonon resonance and Raman scattering at temperatures between T=64 and 360 K

Published:1998-12 Issue: Volume:256-258 Page:625-628
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Schneider D.,Brink C.,Irmer G.,Verma P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

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3. Temperature Dependence of the Band-Edge Effective Mass in n-InAs Deduced from Magnetophonon Resonance

4. Yu.A. Firsov, V.L. Gurevich, R.V. Parfeniev, in: G. Landwehr, E.I. Rashba (Eds.), Landau Level Spectroscopy, Elsevier, Amsterdam, 1991, pp. 1182–1302

5. Effective mass and energy-band parameters in InP by magnetophonon effect

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