Tunneling current bistability of correlated 2D electron–hole layers-Reference-Cited by-同舟云学术

Tunneling current bistability of correlated 2D electron–hole layers

Published:1998-12 Issue: Volume:256-258 Page:531-534
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Parlangeli A.,Christianen P.C.M.,Geim A.K.,Maan J.C.,Eaves L.,Main P.C.,Henini M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. A. Parlangeli et al., Phys. Stat. Sol. A 164 (1997) 587

2. B.R.A. Neves et al., in: M. Scheffler, R. Zimmermann (Eds.), Proceedings of the 23rd International Conference on Phys. Semiconductors Berlin, World Scientific, Singapore, 1996, pp. 2275–2278

3. Engineering superfluidity in electron-hole double layers

4. Tunneling from accumulation layers in high magnetic fields

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electric field distribution in GaN∕AlGaN∕GaN heterostructures with two-dimensional electron and hole gas;Applied Physics Letters;2008

2. Undoped electron-hole bilayers in a GaAs∕AlGaAs double quantum well;Applied Physics Letters;2007-01-29

3. Structure and phase diagram of strongly-coupled bipolar charged-particle bilayers;Europhysics Letters (EPL);2005-11

4. Optical generation of spatially separated electron and hole gases in intrinsicGaAs/AlxGa1−xAsdouble quantum wells;Physical Review B;2001-02-28

5. Bistability and discontinuity in the tunnel current of two-dimensional electron-hole layers;Physical Review B;2001-02-26