Electrical transport in as ion-implanted si in the metal-insulator transition range-Reference-Cited by-同舟云学术

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Electrical transport in as ion-implanted si in the metal-insulator transition range

Published:1990-08 Issue: Volume:165-166 Page:303-304
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Gang Chen,Van Der Heijden R.W.,De Waele A.T.A.M.,Gijsman H.M.,Tielen F.P.B.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Metal-insulator transition in Si: As

2. Critical behavior of Mott variable-range hopping in Si:As near the metal-insulator transition

3. Magnetic Tuning of the Metal-Insulator Transition for Uncompensated Arsenic-Doped Silicon

4. dc conductivity of arsenic-doped silicon near the metal-insulator transition

5. Non-ohmic conductivity of barely localized electrons in three dimensions

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime;Philosophical Magazine B;1992-04

2. The development of milliKelvin Si bolometers for future X-ray array devices;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1991-12

3. Simple activated transport in ion-implanted Si:As at temperatures below 0.5 K;Solid State Communications;1991-04

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