Growth kinetics study of SiGe alloys deposited by rapid thermal process, very low pressure chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Strained-Layer Epitaxy of Germanium-Silicon Alloys
2. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface
3. Temperature dependence of growth of GexSi1−xby ultrahigh vacuum chemical vapor deposition
4. Construction and operation of an ultrahigh vacuum chemical vapor deposition epitaxial reactor for growth of GexSi1−x
5. Selective low‐pressure chemical vapor deposition of Si1−xGexalloys in a rapid thermal processor using dichlorosilane and germane
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural investigation of Si0.5Ge0.5 alloy for optoelectronic applications: Ab initio study;Optik;2013-11
2. Study of Pathway of Hydrogen Migration and Desorption on SiGe(100) Surface UsingAb InitioCalculations;Japanese Journal of Applied Physics;2005-10-11
3. Study of GeSi alloy deposition on Ge substrate by very low-pressure chemical vapor deposition;Journal of Crystal Growth;1998-01
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