Carrier localization in GaP/AlP type-II heterostructures in high magnetic fields
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
2. Silicon/germanium strained layer superlattices
3. Efficient luminescence from AlP/GaP neighboring confinement structure with AlGaP barrier layers
4. Photoluminescence spectra of GaP/AlP short-period superlattices under high magnetic fields
5. Magnetophotoluminescence spectroscopy of AlGaP-based neighboring confinement structures
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2. GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence;Journal of Applied Physics;2016-05-07
3. Anomalous diamagnetic shifts in InP-GaP lateral quantum-wires;Optics Express;2015-10-21
4. Studying structural, electronic and optical properties of zinc-blende Ga1−xAlxP at normal and under pressure by means of first principle;Materials Research Express;2015-10-16
5. Photoluminescence anomalies of indirect excitons localized at interfaces in CdS/ZnSe MQWs in very high magnetic fields;Journal of Physics: Conference Series;2011-12-28
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