Rhodium-related deep levels in n-type MOCVD GaAs-Reference-Cited by-同舟云学术

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Rhodium-related deep levels in n-type MOCVD GaAs

Published:2001-12 Issue: Volume:308-310 Page:816-819
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Zafar Iqbal M.,Majid A.,Haidar Khan S.,Ali Akbar,Zafar Nasim,Dadgar A.,Bimberg D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Deep-level transient-spectroscopy study of rhodium in indium phosphide

2. Ruthenium: A superior compensator of InP

4. Capacitance Transient Spectroscopy

5. Thermally Simulated Relaxation in Solids;Lang,1979

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 4d transition-metal impurity rhodium in GaAs grown by metal-organic chemical vapor deposition;Journal of Applied Physics;2008-12

2. Deep levels in rhodium-doped p-type MOCVD GaAs;Physica B: Condensed Matter;2003-12

3. Characteristics of deep levels associated with rhodium impurity in n-type GaAs;Journal of Applied Physics;2003-09

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