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Sites and motion of Mu− defect centers in n-type gallium nitride

  • Published:2000-08 Issue: Volume:289-290 Page:542-545
  • ISSN:0921-4526
  • Container-title:Physica B: Condensed Matter
  • language:en
  • Short-container-title:Physica B: Condensed Matter

Author:

Lichti R.L,Cox S.F.J,Dawdy M.R,Head T.L,Hitti B,Molnar R.J,Schwab C,Vaudo R.P

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamics of positively charged muonium centers in indium nitride;Physical Review B;2006-12-29

2. Diffusion and trapping of Mu in the III–V nitrides;Journal of Physics: Condensed Matter;2004-09-25

3. Diffusion of a Light Hydrogen Isotope in the III-V Nitrides;Defect and Diffusion Forum;2004-05

4. Muonium as a Shallow Center in GaN;Physical Review Letters;2004-03-31

5. Location of the hydrogen donor in InN: evidence from muonium results;Journal of Physics: Condensed Matter;2004-01-09
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