A molecular dynamics study of interstitial boron in diamond
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. A theoretical study of boron and nitrogen doping in tetrahedral amorphous carbon
2. The migration of interstitial H in diamond and its pairing with substitutional B and N: Molecular orbital theory
3. Ab initiostudy of substitutional boron and the boron-hydrogen complex in diamond
4. Electrical properties of thick boron and nitrogen contained CVD diamond films
5. Boron incorporation effects in CVD diamond film growth
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1. Defect Configurations and Ionization Energies of Carbon Vacancies, Hydrogen, Boron and Their Complexes in Diamond;Journal of Electronic Materials;2021-10-14
2. Combining nanostructuration with boron doping to alter sub band gap acceptor states in diamond materials;Journal of Materials Chemistry A;2018
3. Dopant-site effect in superconducting diamond (111) studied by atomic stereophotography;Applied Physics Letters;2007-12-17
4. Theory of boron aggregates in diamond: First-principles calculations;Physical Review B;2006-02-13
5. Stereophotographs of diamond and graphite;Science and Technology of Advanced Materials;2006-01
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