Luminescence and influence of defect concentration on excitons in 197Hg/197Au-doped CdTe-Reference-Cited by-同舟云学术

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Luminescence and influence of defect concentration on excitons in 197Hg/197Au-doped CdTe

Published:1999-12 Issue: Volume:273-274 Page:870-874
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Hamann J,Burchard A,Deicher M,Filz T,Ostheimer V,Strasser F,Wolf H,Collaboration ISOLDE,Wichert Th

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Radioactive Isotopes In Photoluminescence Experiments: Identification Of Defect Levels

2. Electrical and optical properties of Au in cadmium telluride

3. Photoluminescence Spectroscopy of Proton Implantation Induced Defects in CdTe and ZnTe

4. Photoluminescence study of proton-implanted CdTe and ZnTe

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1. Microstructure and point defects in CdTe nanowires for photovoltaic applications;Nanotechnology;2013-03-12

2. Profiling unusual diffusion by scanning photoluminescence;physica status solidi (c);2012-05-08

3. Inclusions Elimination and Resistivity Restoration of CdTe:Cl Crystals by Two-Step Annealing;IEEE Transactions on Nuclear Science;2011-08

4. The strange diffusivity of Ag atoms in CdTe;Physica B: Condensed Matter;2001-12

5. Photoluminescence study of II–VI semiconductors by using radioactive 71As dopants;Physica B: Condensed Matter;2001-01

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