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To 40 years of defects in semiconductors: may the problem never be solved!

  • Published:1999-12 Issue: Volume:273-274 Page:1-6
  • ISSN:0921-4526
  • Container-title:Physica B: Condensed Matter
  • language:en
  • Short-container-title:Physica B: Condensed Matter

Author:

Stavola Michael

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Defects in Semiconductors;Kimerling,1983

2. G.D. Watkins, in: R.R. Hasiguti (Ed.), Defects and Radiation Effects in Semiconductors, 1980, Inst. Phys. Conference Series 59, Institute of Physics, Bristol, 1981, p. 139.

3. Proceedings of the Conference on Radiation Effects in Semiconductors, Gatlinburg, 1959, J. Appl. Phys. 30 (1959) 1117.

4. G. Davies, M.H. Nazaré (Eds.), Defects in Semiconductors, ICDS-19, Trans. Tech., Switzerland, 1997.

5. R.R. Hasiguti (Ed.), Defects and Radiation Effects in Semiconductors, 1980, Inst. Phys. Conference Series 59, Institute of Physics, Bristol, 1981.

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1. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2017

2. Creation of paired electron states in the gap of semiconducting carbon nanotubes by correlated hydrogen adsorption;New Journal of Physics;2007-08-17

3. Copper-related defects in silicon;Materials Science in Semiconductor Processing;2004

4. Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles;Journal of Physics: Condensed Matter;2003-09-19

5. Shallow-level centers in semiconductors – 2000;Physica B: Condensed Matter;2001-01
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