Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Kohyama, S., Very High Speed MOS Devices, Chap. 2. Clarendon Press, Oxford, 1990
2. Where do hot electrons come from?;Frey;IEEE Circuits and Devices,1991
3. Hot-electron-induced MOSFET degradation-model, monitor, and improvement;Hu;IEEE Trans. Electron Dev.,1985
4. Interface state creation and charge trapping in the medium-to-high gate voltage range (Vd/2≤Vg≤Vd) during hot-carrier stressing of n-MOS transistors;Doyle;IEEE Trans. Electron Dev.,1990
5. A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation;Chung;IEEE Trans. Electron Dev.,1991
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