Failure mechanism and SPICE modeling of HBT long-term current instability-Reference-Cited by-同舟云学术

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Failure mechanism and SPICE modeling of HBT long-term current instability

Published:1997-10 Issue:10-11 Volume:37 Page:1643-1650
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Liou J.J.,Sheu S.H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Principles and Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors;Liou,1996

2. A practical end-of-life model for semiconductor devices;Ash;IEEE Trans. Reliability,1989

3. Reliability analysis of GaAsAlGaAs HBT's under forward current/temperature stress;Hafizi,1990

4. Improved reliability of AlGaAsGaAs heterojunction bipolar transistors with a strain-relaxed base;Sugahara,1993

5. Characterization of bias-stressed carbon-doped GaAsAlGaAs power heterojunction bipolar transistor;Henderson;Digest IEEE IEDM,1994

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability physics of compound semiconductor transistors for microwave applications;Microelectronics Reliability;2001-01

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