Threshold voltage shift in 0.1 μm self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs-Reference-Cited by-同舟云学术

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Threshold voltage shift in 0.1 μm self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs

Published:1999-12 Issue:12 Volume:39 Page:1787-1792
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Fukai Yoshino K.,Yamasaki Kimiyoshi,Nishimura Kazumi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. 26-GHz GaAs room-temperature dynamic divider circuit;Jansen,1987

2. A 0.2 μm GaAs MESFET Technology for 10 Gbit/s digital and analog IC’s;Yamane,1991

3. A 0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications;Tokumitsu;IECE TRANS. ELECTRON,1995

4. Nagano J, Ogawa K. Technical Report for NTT (in Japanese)

5. Hydrogen effects on GaAs microwave semiconductors;Ragle,1997

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