Relation between residual stress and electrical properties of polysilicon/oxide/silicon structures-Reference-Cited by-同舟云学术

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Relation between residual stress and electrical properties of polysilicon/oxide/silicon structures

Published:2000-04 Issue:4-5 Volume:40 Page:597-600
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Jalabert L,Temple-Boyer P,Olivié F,Sarrabayrouse G,Cristiano F,Colombeau B

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Electrical characteristics of thin silica layers nitrided by LPCVD nitrogen doped silicon

2. Nitridization of the stacked poly-Si gate to suppress the boron penetration in pMOS

3. Breakdown properties of metal/NIDOS SiO2/silicon structures

4. The tension of metallic films deposited by electrolysis

5. Correlations between stress and microstructure into LPCVD silicon films

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure of thick polycrystalline silicon films for MEMS application;Sensors and Actuators A: Physical;2003-03

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