Silicon integrated circuit technology from past to future-Reference-Cited by-同舟云学术

Silicon integrated circuit technology from past to future

Published:2002-04 Issue:4-5 Volume:42 Page:465-491
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Iwai Hiroshi,Ohmi Shun'ichiro

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference62 articles.

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4. Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions;Ono;IEDM Tech Dig,1993

5. Tunnelling gate oxide approach to ultra-high current drive in small-geometry MOSFETs;Momose;IEDM Tech,1994

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