Author:
Jones B.K,Graham C.N,Konczakowska A,Hasse L
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. The effect of traps at the free surface of GaAs field effect transistors;Jin;J Appl Phys,1996
2. Abdala MA, Jones BK. The excess noise in GaAs MESFETs. In: Musha T, Sato S, Yamamoto M, editors. Noise in physical systems, Ohmsha, Kyoto 1991. p. 87–90
3. Abdala MA, Jones BK. The 1/f noise in GaAs field-effect transistors. Noise in physical systems and 1/f fluctuations. AIP Conference Proceedings 285, St. Louis 1993. p. 236–39
4. Abdala MA, Iqbal MA, Jones BK. The measurement and analysis of the 1/f noise in GaAsFETs. Solid-State Electron 1996;39:287–95
5. Jones BK, Iqbal MA. Traps found in GaAs MESFETs: properties, location and detection. Mat Sci Forum 1997;258–63
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