Analysis of high-power devices using proton beam induced charge microscopy-Reference-Cited by-同舟云学术

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Analysis of high-power devices using proton beam induced charge microscopy

Published:2001-09 Issue:9-10 Volume:41 Page:1519-1524
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Zmeck M.,Phang J.,Bettiol A.,Osipowicz T.,Watt F.,Balk L.,Niedernostheide F.-J.,Schulze H.-J.,Falck E.,Barthelmess R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion beam induced charge microscopy studies of power diodes;Journal of Physics: Condensed Matter;2003-12-22

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