Author:
Rodrı́guez R.,Porti M.,Nafrı́a M.,Aymerich X.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Mechanism for stress‐induced leakage currents in thin silicon dioxide films
2. Lu Q, Cheung KP, Ciampa NA, Liu CT, Chang C-P, Colonell JI, Lai W-Y-C, Liu R, Miner JF, Vaidya H, Pai C-S, Clemens JT. 37th, IEEE International Reliability Physics Symposium Proceedings, 1999. p. 396–9
3. Nygam T, Degraeve R, Groeseneken G, Heyns MM, Maes HE. 37th International Reliability Physics Symposium Proceedings, 1999. p. 381–8
4. Monitoring the degradation that causes the breakdown of ultrathin (<5 nm) SiO2 gate oxides
5. Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions