Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing-Reference-Cited by-同舟云学术

Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing

Published:2001-08 Issue:8 Volume:41 Page:1103-1108
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Würfl Joachim,Kurpas Paul,Brunner Frank,Mai Michael,Rudolph Matthias,Weyers Markus

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

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2. High reliablity InGaP/GaAs HBT;Pan;IEEE Electron Dev Lett,1998

3. Welser RE, Chaplin M, Lutz CR, Pan N, Gupta A, Vaesel B, Ezis A. Base current investigation of the long term reliability of GaAs based HBTs. Proc GaAs-MANTECH 2000. p. 145–8

4. High performance InGaP/GaAs HBTs for mobile communications;Achouche;Electron Lett,2000

5. John W, Weixelbaum L, Wittrich H, Frankowski G, Würfl J. III-V dry etching by CCD-controlled in situ interferometry. Proc GaAs-MANTECH 2000. p. 21–4

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1. (Invited) (ECS Electronics & Photonics Division Award )Wafer-Level Step-Stressing of InGaP/GaAs HBTs;ECS Transactions;2014-03-20

2. A Survey of Electrical Signatures Characteristic of Step-Stressed InGaP/GaAs HBTs;ECS Transactions;2013-03-15

3. Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE;Microelectronics Reliability;2003-06

4. Flip-chip mounted 26 V GalnP/GaAs power UBTs;IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.