Influence of the silicon nitride oxidation on the performances of NCLAD isolation-Reference-Cited by-同舟云学术

Influence of the silicon nitride oxidation on the performances of NCLAD isolation

Published:1998-05 Issue:5 Volume:38 Page:795-805
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Tixier A.,Senez V.,Baccus B.,Marmiroli A.,Colpani P.,Rebora A.,Carnevale G.P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Tixier, A., Senez, V., Baccus, B., Marmiroli, A., Colpani, P. and Rebora, A., ESSDERC'96, 1996, pp. 149–152

2. Tixier, A., Senez, V., Baccus, B. and Marmiroli, A., SISPAD'96, 1996, pp. 881–884

3. Kamins, T. I., Oxidation of Silicon Nitride, unpublished, July 1981

4. Silvaco, SSUPREM III User's Manual, Version 5.1, 1992

5. Thermal Oxidation Rate of a Si3N4Film and Its Masking Effect against Oxidation of Silicon

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