The effects of TMDD-PA concentration on roughness of Si 〈1 1 0〉 and etching rate ratio of Si 〈1 1 0〉/〈1 1 1〉 in alkaline KOH solution-Reference-Cited by-同舟云学术

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The effects of TMDD-PA concentration on roughness of Si 〈1 1 0〉 and etching rate ratio of Si 〈1 1 0〉/〈1 1 1〉 in alkaline KOH solution

Published:2020-01 Issue: Volume:529 Page:110397
ISSN:0301-0104
Container-title:Chemical Physics
language:en
Short-container-title:Chemical Physics

Author:

Zhu Chunlin,Jiao Qingbin,Tan Xin,Hu Hao,Bayanheshig

Funder

National Youth Science Fund of China

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference13 articles.

1. Phase retrieval and differential phase-contrast imaging with low-brilliance X-ray sources;Pfeiffer;Nat. Phys.,2006

2. Fabrication and characterization of analyzer gratings with high aspect ratios for phase contrast imaging using a Talbot interferometer;Kenntner;AIP Conf. Proc.,2012

3. Ultra-deep anisotropic etching of (110) silicon;Holke;J. Micromech. Microeng.,1999

4. (110) Silicon Etching for High Aspect Ratio Comb Structures;Kim,1997

5. Tan, The effects of ultrasound frequency and power on the activation energy in Si-KOH reaction system;Jiao;Chin. Chem. Lett.,2014

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