Simultaneous effects of pressure and temperature on the optical transition energies in a Ga 0.7 In 0.3 N/GaN quantum ring
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference38 articles.
1. Quantum Dots: A Survey of the Properties of Artificial Atoms;Chakraborty,1999
2. Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode
3. Stimulated emission study of InGaN/GaN multiple quantum well structures
4. Evidence for Phase-Separated Quantum Dots in Cubic InGaN Layers from Resonant Raman Scattering
5. Excitonic properties of strained wurtzite and zinc-blende GaN/AlxGa1−xN quantum dots
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1. Numerical investigation of Auger current density in a InGaN/GaN multiple quantum well solar cell under hydrostatic pressure;Indian Journal of Physics;2023-09-11
2. Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode;Journal of Nanophotonics;2023-05-23
3. Spin–Orbit and Zeeman Effects on the Electronic Properties of Single Quantum Rings: Applied Magnetic Field and Topological Defects;Nanomaterials;2023-04-25
4. Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes;2023-03-01
5. Impact of Electric Field Strength on the Binding Energy of an Off-Center Donor in Quantum Ring: Quarter Cross Section Case;Lecture Notes in Electrical Engineering;2023
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