I–V characteristics of the lambda bipolar transistor-Reference-Cited by-同舟云学术

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I–V characteristics of the lambda bipolar transistor

Published:1995-10 Issue:7 Volume:26 Page:647-652
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Sarkar Manju,Satyam M.,Prabhakar A.

Publisher

Elsevier BV

Subject

General Engineering

Reference8 articles.

1. A high-density MOS static RAM cell using the lambda bipolar transistor;Liv;IEEE J. Solid-State Circuits,1993

2. An analysis and the fabrication technology of the lambda bipolar transistor;Wu;IEEE Trans. Electron Devices,1980

3. Characterisations and design considerations of lambda bipolar transistor;Wu,1981

4. Semiconductor Device Modelling with Spice;Paolo,1988

5. Modern MOS Technology;Ong,1986

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A study of static RAM cell using the lambda bipolar transistor (LBT);Microelectronics Journal;1997-01

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