Coherently strained InAs insertions in GaAs: do they form quantum wires and dots?-Reference-Cited by-同舟云学术

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Coherently strained InAs insertions in GaAs: do they form quantum wires and dots?

Published:1995-12 Issue:8 Volume:26 Page:861-870
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Brandt Oliver,Ilg Matthias,Ploog Klaus

Publisher

Elsevier BV

Subject

General Engineering

Reference40 articles.

1. Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy

2. Ideal Crystal Growth from Kink Sites on a GaAs Vicinal Surface by Metalorganic Chemical Vapor Deposition

3. Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates

4. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices

5. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)

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1. Quantum dot laser;Semiconductor Science and Technology;2010-11-15

2. MBE-grown metamorphic lasers for applications at telecom wavelengths;Journal of Crystal Growth;2007-04

3. Devices Based on Epitaxial Nanostructures;NanoScience and Technology;2004

4. Quantum dot lasers: from promise to reality;SPIE Proceedings;2000-07-14

5. Quantum-dot heterostructure lasers;IEEE Journal of Selected Topics in Quantum Electronics;2000-05

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