Silicon doping by erbium to create light-emitting structures-Reference-Cited by-同舟云学术

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Silicon doping by erbium to create light-emitting structures

Published:1995-10 Issue:7 Volume:26 Page:725-735
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Sobolev N.A

Publisher

Elsevier BV

Subject

General Engineering

Reference31 articles.

1. A proposal for a D.C. pumped rare-earth laser;Bell;J. Appl. Phys.,1963

2. Intracenter transitions in Yb3+ impurities in gallium phosphide;Kasatkin;Sov. Phys. Semicond.,1980

3. 1.54-μm luminescence of erbium-implanted III–V semiconductors and silicon;Ennen;Appl. Phys. Lett.,1983

4. Evaluation of erbium-doped silicon for optoelectronic applications;Xie;J. Appl. Phys.,1991

5. Luminescence of rare-earth ions in III–V semiconductors;Ennen,1985

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of Luminescent Structures in Thin a-Si:H–Er Films Irradiated by Femtosecond Laser Pulses;JETP Letters;2021-12

2. Using nanoparticles to synthesize erbium-doped light-emitting thin film;Thin Solid Films;2010-07

3. Optical gain at 1530 nm from Si-based light emitting layer containing mixture of Er/sub 2/O/sub 3/, P/sub 2/O/sub 5/,Yb/sub 2/O/sub 3/ nanoparticles and spin-on glass;2005 IEEE LEOS Annual Meeting Conference Proceedings;2005

4. White electroluminescent nanostructures in silicon fabricated using focused ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-07

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