Double epitaxial layer power Schottky diodes with end in the ramp oxide technique-Reference-Cited by-同舟云学术

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Double epitaxial layer power Schottky diodes with end in the ramp oxide technique

Published:1996-02 Issue:1 Volume:27 Page:67-72
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Badila Marian,Brezeanu Gheorghe

Publisher

Elsevier BV

Subject

General Engineering

Reference12 articles.

1. Physics of Semiconductor Devices;Sze,1981

2. Modern Power Devices;Baliga,1987

3. Contactual Metal Semiconductor in Microelectronica;Dascalu,1988

4. Impurity lateral gradient Schottky diodes. Simulation and experiment;Badila,1994

5. On the reverse blocking characteristics of Schottky power diodes;Tu;IEEE Trans. Electron Devices,1992

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage;Materials Science Forum;2000-05

2. Schottky Oxide Ramp Diodes;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

3. Medici Simulation of 6H-SiC Oxide Ramp Profile Schottky Structure;Materials Science Forum;1998-02

4. New Terminations for Planar Schottky Structure (PSS);Frontiers in Nanoscale Science of Micron/Submicron Devices;1996

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