The processes of defect formation and conductivity compensation of n-GaAs:Yb due to electron irradiation-Reference-Cited by-同舟云学术

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The processes of defect formation and conductivity compensation of n-GaAs:Yb due to electron irradiation

Published:1995-01 Issue:1 Volume:26 Page:69-76
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Kozlovski Vitali V.,Zakharenkov Leonid F.

Publisher

Elsevier BV

Subject

General Engineering

Reference20 articles.

1. Review of radiation-induced defects in III-V compounds;Lang,1977

2. Introduction and annealing of defects in n-type GaAs following irradiation with electrons and gamma rays;Kol'chenko;Radiation Effects,1978

3. Energy and temperature dependence of electron irradiation damage in GaAs;Kalma;IEEE Trans. Nucl. Sci.,1975

4. The efficiency of electronic traps penetration in GaAs due to the electron high temperature irradiation;Kozlovski;Sov. Phys. Semicond.,1991

5. Impurity defect interactions in GaAs;Stievenard;J. Appl. Phys.,1986

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RADIATION DEFECT ENGINEERING;International Journal of High Speed Electronics and Systems;2005-03

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