BAMBI — A transient 2D-MESFET model with general boundary conditions including Schottky and current controlled contacts-Reference-Cited by-同舟云学术

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BAMBI — A transient 2D-MESFET model with general boundary conditions including Schottky and current controlled contacts

Published:1990-09 Issue:5 Volume:21 Page:5-21
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Kausel W.,Nylander J.O.,Nanz G.,Selberherr S.,Poetzl H.

Publisher

Elsevier BV

Subject

General Engineering

Reference11 articles.

1. Radiation hardness of a silicon MESFET 4Kx1 sRAM;Houston;IEEE Trans. Nucl. Sci.,1984

2. Complementary Si MESFET concept for logic circuits;Bohlin,1985

3. BAMBI — a design model for power MOSFETs;Franz,1984

4. BAMBI — a design model for power MOSFETs;Franz;IEEE Trans. CAD,1985

5. Basic equations for semiconductor — device operation;Sze,1981

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A splitting scheme based on the space–time CE/SE method for solving multi-dimensional hydrodynamical models of semiconductor devices;Computer Physics Communications;2016-08

2. Numerical examination of silicon avalanche photodiodes operated in charge storage mode;IEEE Transactions on Electron Devices;1998

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