Silicon oxide deposited by direct photolysis of N2O and SiH4 at 185 nm on sulfur-treated InP: application to InP MISFETs-Reference-Cited by-同舟云学术

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Silicon oxide deposited by direct photolysis of N2O and SiH4 at 185 nm on sulfur-treated InP: application to InP MISFETs

Published:1993-07 Issue:4 Volume:24 Page:371-376
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Proust N,Petitjean M,Arnodo C,Beguet M,Chapeaublanc J.F,Perrin J

Publisher

Elsevier BV

Subject

General Engineering

Reference12 articles.

1. High-power InP MISFETs

2. Proceedings of the International Electronic Devices Meeting;Messick,1986

3. Institute of Physics Conference Series: International Symposium on GaAs and Related Compounds;Tokuda,1986

4. InP depletion-mode microwave MISFET's

5. Institute of Physics Conference Series: International Symposium on GaAs and Related Compounds;Tokuda,1988

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